2015 Volume E98.C Issue 5 Pages 402-405
In this study, Si(100) surface flattening process was investigated utilizing sacrificial oxidation method to improve Metal–Insulator–Semiconductor (MIS) diode characteristics. By etching of the 100 nm-thick sacrificial oxide formed by thermal oxidation at 1100°C, the surface roughness of Si substrate was reduced. The obtained Root-Mean-Square (RMS) roughness was decreased from 0.15 nm (as-cleaned) to 0.07 nm in the case of sacrificial oxide formed by wet oxidation, while it was 0.10 nm in the case of dry oxidation. Furthermore, time-dependent dielectric breakdown (TDDB) characteristic of Al/SiO2(10 nm)/p-Si(100) MIS diode structures was found to be improved by the reduction of Si surface RMS roughness.
