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IEICE Transactions on Electronics
Vol. E99.C (2016) No. 2 pp. 285-292



Regular Section

We numerically demonstrated the improvement of single-electron (SE) digital logic gates by utilizing SE input discretizers (IDs). The parameters of the IDs were adjusted to achieve SE tunneling at the threshold voltage designed for switching. An SE four-junction inverter (FJI) with an ID (ID-FJI) had steep switching characteristics between the high and low output voltage levels. The limiting temperature and the critical parameter margins were evaluated. An SE NAND gate with IDs also achieved abrupt switching characteristics between output logic levels.

Copyright © 2016 The Institute of Electronics, Information and Communication Engineers

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