Bias Polarity Dependent Resistive Switching Behaviors in Silicon Nitride-Based Memory Cell

Sungjun KIM; Min-Hwi KIM; Seongjae CHO; Byung-Gook PARK

doi:10.1587/transele.E99.C.547

Special Section on Fundamentals and Applications of Advanced Semiconductor Devices

Bias Polarity Dependent Resistive Switching Behaviors in Silicon Nitride-Based Memory Cell

Sungjun KIM, Min-Hwi KIM, Seongjae CHO, Byung-Gook PARK

著者情報

キーワード: resistive random-access memory (RRAM), silicon nitride (Si₃N₄), bias polarity, switching parameters

ジャーナル認証あり

2016 年 E99.C 巻 5 号 p. 547-550

DOI https://doi.org/10.1587/transele.E99.C.547

詳細

抄録

In this work, the bias polarity dependent resistive switching behaviors in Cu/Si₃N₄/p⁺ Si RRAM memory cell have been closely studied. Different switching characteristics in both unipolar and bipolar modes after the positive forming are investigated. The bipolar switching did not need a forming process and showed better characteristics including endurance cycling, uniformity of switching parameters, and on/off resistance ratio. Also, the resistive switching characteristics by both positive and negative forming switching are compared. It has been confirmed that both unipolar and bipolar modes after the negative forming exhibits inferior resistive switching performances due to high forming voltage and current.

責任著者(Corresponding author)

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