IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Regular Section
Pseudo-CMOS with Re-Pull-Down Transistor: A Low Power Inverter Design for Thin-Film Transistors
Lihao ZHONGRuohe YAOFei LUO
著者情報
ジャーナル 認証あり

2016 年 E99.C 巻 6 号 p. 727-729

詳細
抄録
In order to further optimize the power consumption of Pseudo-CMOS inverter, this paper proposes a Re-Pull-Down transistor scheme. Two additional transistors are used to build another pull-down network. With this design, the quiescent current of the inverter can be reduced while the ratioless nature is preserved. Based on the reduced input gate area, two output transistors are set wider to compensate for the pull-up speed. The simulation result shows that, compared with Pseudo-CMOS inverter, the maximum quiescent current of the Re-Pull-Down transistor scheme inverter is reduced by 37.6% in the static analysis. Besides, the average power consumption is reduced by 30.8% in the 5-stage ring oscillator test.
著者関連情報
© 2016 The Institute of Electronics, Information and Communication Engineers
前の記事 次の記事
feedback
Top