Efficiency Analysis of SiC-MOSFET-Based Bidirectional Isolated DC/DC Converters

抄録

Circuit performance of SiC-MOSFET-based bidirectional isolated DC/DC converters is investigated based on circuit simulation with the physically accurate compact device model HiSIM_HV. It is demonstrated that the combined optimization of the MOSFETs R_on and of the inductances in the transformer can enable a conversion efficiency of more than 97%. The simulation study also verifies that the possible efficiency improvements are diminished due to the MOSFET-performance degradation, namely the carrier-mobility reduction, which results in a limitation of the possible R_on reduction. It is further demonstrated that an optimization of the MOSFET-operation conditions is important to utilize the resulting higher MOSFET performance for achieving additional converter efficiency improvements.