An SOI-based lock-in pixel with a shallow buried channel for reducing parasitic light sensitivity and improving modulation contrast

Abstract

This paper presents a high-NIR sensitivity SOI-gate lock-in pixel with improved modulation contrast. The proposed pixel has a shallow buried channel and intermediate gates to create both a high lateral electric field and a potential barrier to parasitic light sensitivity. Device simulation results showed that parasitic light sensitivity reduced from 13.7% to 0.13% compared to the previous structure.