Single-electron transistor operation of a physically defined silicon quantum dot device fabricated by electron beam lithography employing a negative-tone resist

Shimpei Nishiyama; Kimihiko Kato; Yongxun Liu; Raisei Mizokuchi; Jun Yoneda; Tetsuo Kodera; Takahiro Mori

doi:10.1587/transele.2022FUS0002

This article has now been updated. Please use the final version.

Single-electron transistor operation of a physically defined silicon quantum dot device fabricated by electron beam lithography employing a negative-tone resist

Shimpei Nishiyama, Kimihiko Kato, Yongxun Liu, Raisei Mizokuchi, Jun Yoneda, Tetsuo Kodera, Takahiro Mori

Author information

Shimpei Nishiyama
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
Device Technology Research Institute (D-Tech), National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba
Kimihiko Kato
Device Technology Research Institute (D-Tech), National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba
Yongxun Liu
Device Technology Research Institute (D-Tech), National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba
Raisei Mizokuchi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
Jun Yoneda
Tokyo Tech Academy for Super Smart Society, Tokyo Institute of Technology
Tetsuo Kodera
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
Takahiro Mori
Device Technology Research Institute (D-Tech), National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba

Keywords: Silicon qubit, electron beam lithography, negative-tone resist, physically defined quantum dot

JOURNAL RESTRICTED ACCESS Advance online publication

Article ID: 2022FUS0002

DOI https://doi.org/10.1587/transele.2022FUS0002

The final version of this article is now available: Vol. E106.C (2023), No. 10 pp. 592-596

Details

Abstract

We have proposed and demonstrated a device fabrication process of physically defined quantum dots utilizing electron beam lithography employing a negative-tone resist toward high-density integration of silicon quantum bits (qubits). The electrical characterization at 3.8 K exhibited so-called Coulomb diamonds, which indicates successful device operation as single-electron transistors. The proposed device fabrication process will be useful due to its high compatibility with the large-scale integration process.

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