Single-electron transistor operation of a physically defined silicon quantum dot device fabricated by electron beam lithography employing a negative-tone resist

抄録

We have proposed and demonstrated a device fabrication process of physically defined quantum dots utilizing electron beam lithography employing a negative-tone resist toward high-density integration of silicon quantum bits (qubits). The electrical characterization at 3.8 K exhibited so-called Coulomb diamonds, which indicates successful device operation as single-electron transistors. The proposed device fabrication process will be useful due to its high compatibility with the large-scale integration process.