IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences
Online ISSN : 1745-1337
Print ISSN : 0916-8508
Special Section on Wideband Systems
A 2-5GHz Wideband Inductorless Low Noise Amplifier for LTE and Intermediate-Frequency-Band 5G Applications
Youming ZHANGFengyi HUANGLijuan YANGXusheng TANGZhen CHEN
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2019 Volume E102.A Issue 1 Pages 209-210

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Abstract

This paper presents a wideband inductorless noise-cancelling balun LNA with two gain modes, low NF, and high-linearity for LTE and intermediate-frequency-band (eg. 3.3-3.6GHz, 4.8-5GHz) 5G applications fabricated in 65nm CMOS. The proposed LNA is bonding tested and exhibits a minimum NF of 2.2dB and maximum IIP3 of -3.5dBm. Taking advantage of an off-chip bias inductor in CG stage and a cross-coupled buffer, the LNA occupies high operation frequency up to 5GHz with remarkable linearity and NF as well as compact area.

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© 2019 The Institute of Electronics, Information and Communication Engineers
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