2019 Volume E102.A Issue 1 Pages 209-210
This paper presents a wideband inductorless noise-cancelling balun LNA with two gain modes, low NF, and high-linearity for LTE and intermediate-frequency-band (eg. 3.3-3.6GHz, 4.8-5GHz) 5G applications fabricated in 65nm CMOS. The proposed LNA is bonding tested and exhibits a minimum NF of 2.2dB and maximum IIP3 of -3.5dBm. Taking advantage of an off-chip bias inductor in CG stage and a cross-coupled buffer, the LNA occupies high operation frequency up to 5GHz with remarkable linearity and NF as well as compact area.