150 GHz Fundamental Oscillator Utilizing Transmission-line-based Inter-stage Matching in 130nm SiGe BiCMOS Technology

Abstract

A 150 GHz fundamental oscillator employing an inter-stage matching network based on a transmission line is presented in this letter. The proposed oscillator consists of a two-stage common-emitter amplifier loop, whose inter-stage connections are optimized to meet the oscillation condition. The oscillator is designed in a 130-nm SiGe BiCMOS process that offers f_T and f_MAX of 350 GHz and 450 GHz. According to simulation results, an output power of 3.17 dBm is achieved at 147.6 GHz with phase noise of -115 dBc/Hz at 10MHz offset and figure-of-merit (FoM) of -180 dBc/Hz.