IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences
Online ISSN : 1745-1337
Print ISSN : 0916-8508

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Effects of parasitic elements on L-type LC/CL matching circuits
Satoshi TanakaTakeshi YoshidaMinoru Fujishima
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JOURNAL FREE ACCESS Advance online publication

Article ID: 2023GCP0004

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Abstract

L-type LC/CL matching circuits are well known for their simple analytical solutions and have been applied to many radio-frequency (RF) circuits. When actually constructing a circuit, parasitic elements are added to inductors and capacitors. Therefore, each L and C element has a self-resonant frequency, which affects the characteristics of the matching circuit. In this paper, the parallel parasitic capacitance to the inductor and the series parasitic inductor to the capacitance are taken up as parasitic elements, and the details of the effects of the self-resonant frequency of each element on the S11, voltage standing wave ratio (VSWR) and S21 characteristics are reported. When a parasitic element is added, each characteristic basically tends to deteriorate as the self-resonant frequency decreases. However, as an interesting feature, we found that the combination of resonant frequencies determines the VSWR and passband characteristics, regardless of whether it is the inductor or the capacitor.

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