抄録
It is known that hot electrons that excite lunimescent centers are injected into an emitting layer from p-Si as a result of a band bending in Si at the interface between SiO_2 and p-Si. Therefore low voltage driving of a EL device is expected. In this study, a thin-film EL device is prepared on p-MOSFET in order to apply this fact. Luminance of about 10cd/m^2 was obtained from ITO/ZnS : Tb/SiO_2/p-n Si/Al device structure.
