2019 年 62 巻 7 号 p. 421-426
Oxide semiconductors have various useful material properties such as a wide bandgap and capability of low temperature film formation and therefore can be formed on a glass or plastic substrate by sputtering or other methods. A thin film transistor is becoming its major application as a pixel driver for LCD or OLEDs. We focused on zinc oxide among oxide semiconductors and evaluated the electron transport properties using a single crystal heterostructure formed by MBE in order to evaluate the potential performance of ZnO based transistors. The devices showed high performance applicable to various applications. As a possible application of ZnO transistors, we also report applications to biosensors.