特集「2019年日本表面真空学会学術講演会特集号Ⅲ」
分子吸着によるMoS2-FET電気特性の変化
2020 年 63 巻 8 号 p. 419-424
詳細
2020 年 63 巻 8 号 p. 419-424
Molybdenum disulfide (MoS2) has attracted much attentions since it possesses electrical properties as a semiconductor and it is easy to obtain atomically thin films from natural resources and its bandgap can be controlled by a number of layers. Authors created devices using this MoS2 as the channel material of field-effect transistors (FET), and tried to detect molecules from the change in the electrical characteristics. This paper describes that the electric properties such as the drain current, the threshold voltages, and the mobility are significantly changed when chlorine molecules and Tetracyanoquinodimethane (TCNQ) molecules are adsorbed on the surface of MoS2-FET.
