表面と真空
Online ISSN : 2433-5843
Print ISSN : 2433-5835
特集:2019年日本表面真空学会学術講演会特集号Ⅳ
デバイス応用に向けたグラフェンナノリボンのボトムアップ合成
大伴 真名歩林 宏暢實宝 秀幸原田 直樹山口 淳一林 賢二郎大淵 真理山田 容子佐藤 信太郎
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2020 年 63 巻 9 号 p. 492-497

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In this review, we summarize recent progress achieved in on-surface bottom-up growth of graphene nanoribbons (GNRs) with well-defined edges. First, we show the simulation results suggesting that a GNR backward diode with GNR heterojunction can outperform the state-of-the-art diodes owing to their negligible junction capacitance. The major challenge required for achieving high-performance GNR diodes is low contact resistance and well-defined GNR heterojunction. The second part of this review is dedicated to our recent works on GNR heterojunctions by modifying electronic states by edge-functionalization. It was revealed that the important design policies for precursors are as follows : molecular design avoiding intramolecular steric hinderance upon polymerization, precursor design considering dehydrogenation path, and precursor design considering intramolecular side reaction. We also demonstrate our preliminary results of GNR-FET, which suggest that wider GNRs with narrower band gap is required for the electronic devices.

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この記事はクリエイティブ・コモンズ [表示 - 非営利 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by-nc/4.0/deed.ja
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