特集「原子制御CVDが拓く新材料設計」
六方晶窒化ホウ素/グラフェン積層構造の結晶方位制御
2022 年 65 巻 4 号 p. 190-195
詳細
2022 年 65 巻 4 号 p. 190-195
Hexagonal boron nitride (h-BN) is an indispensable material for two-dimensional van der Waals (vdW) materials-based devices. Scalable fabrication methods for high-quality h-BN are essential for the industrial applications. In addition, control of the interlayer angles of stacked 2D vdW materials is crucial for tailoring their electrical properties. In this article, we introduce chemical vapor deposition (CVD) growth of single-orientation h-BN. Then we propose an epitaxial intercalation method for vertically stacked h-BN/graphene bilayers with a high uniformity and a controlled interlayer angle.
