特集「原子制御CVDが拓く新材料設計」
遷移金属カルコゲナイド原子層・原子細線の化学気相成長
キーワード:
two-dimensional materials,
atomic layers,
atomic wires,
transition metal dichalcogenide,
chemical vapor deposition
2022 年 65 巻 4 号 p. 196-201
詳細
2022 年 65 巻 4 号 p. 196-201
Recently, atomically-thin layered and wired transition metal chalcogenides (TMCs) have attracted much attention because of their unique physical properties and potential applications. To understand and use these materials, it is still essential to develop large-scale growth processes of such TMC nanostructures with various geometries. In this article, the author introduces the recent progress of the chemical vapor deposition (CVD) growth of layered and wired TMCs. For 2D layered TMCs, metal-organic CVD and direct growth at metal/oxide interface are presented. CVD also provides a powerful way for wafer-scale growth of 1D TMC atomic wires with either aligned, atomically thin 2D sheets or random networks of 3D bundles, both composed of individual wires.
