2022 年 65 巻 9 号 p. 388-393
Copper oxide nanowires with good crystallinity and high aspect ratio have been attractive for use in high-performance optical and electronic devices. In this work, we fabricated copper oxide nanowires by thermal oxidation method. Copper oxide nanowires were fabricated at various heating times, keeping at a heating temperature of 500℃. When the heating time was over 30 minutes, the average width of the nanowires reached about 100 nm. It was observed that the bottom part of the nanowire was thick compared to the top part. We investigated the detailed structure by using micro-raman spectroscopy and electron backscatter diffraction (EBSD). From the results of raman spectra and EBSD crystal orientation mappings, it was found that Cu2O/CuO heterostructure is formed at the thick region of the nanowire. Two type of heterostructures were confirmed, namely Cu2O(110)/CuO(001) and Cu2O(110)/CuO(110).