化学気相成長法および原子層堆積法の基礎と化学物質の安全管理 第1回 はじめに 化学気相成長法および原子層堆積法の必要性

抄録

Our lives have been dramatically enriched by a variety of electronic devices. The manufacturing of these electronic devices requires thin-film deposition technology that utilizes vacuum technology. Vacuum-based thin-film deposition techniques (dry processes) can be broadly classified into physical vapor deposition (PVD) methods and chemical vapor deposition (CVD) methods. Certain types of films are extremely difficult to deposit using PVD method but can be achieved using CVD method.

Here, six advantages of the CVD method compared to the PVD method are summarized : 1) Crystal growth with fewer defects can be achieved. 2) Amorphous films with few defects can be produced. 3) Autodoping is possible. 4) Excellent coverage characteristics can be achieved on finely textured surfaces, and the coverage can be precisely controlled. 5) Metastable state films can be fabricated. 6) It is possible to fabricate films that depend on the substrate surface. A detailed explanation of these advantages of CVD methods is provided.

These performances are explained in this report.