YAKUGAKU ZASSHI
Online ISSN : 1347-5231
Print ISSN : 0031-6903
ISSN-L : 0031-6903
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Binding of Gαo N-Terminus is Responsible for the Voltage-Resistant Inhibition of α1A (P/Q-Type, Cav2.1) Ca2+ Channels
Mariko KINOSHITA
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2002 Volume 122 Issue 8 Pages 565-572

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Abstract
G-protein-mediated inhibition of presynaptic voltage-dependent Ca2+ channels is comprised of voltage-dependent and -resistant components. The former is caused by a direct interaction of Ca2+ channel α1 subunits with Gβγ, whereas the latter has not been well characterized. Here, we show that the N-terminus of Gαo is critical for the interaction with the C-terminus of the P/Q-type channel subunit, and that the binding induces voltage-resistant inhibition. A P/Q-type C-terminal peptide, an antiserum raised against the Gαo N-terminus, and a Gαo N-terminal peptide all attenuated the voltage-resistant inhibition of P/Q-type currents. Furthermore, the N-terminus of Gαo bound to the C-terminus of α1A in vitro, which was prevented either by the P/Q-type channel C-terminal or Gαo N-terminal peptide. Although the C-terminal domain of the N-type channel showed similar ability to binding with Gαo N-terminus, the above-mentioned treatments were ineffective in the N-type channel current. These findings demonstrate that the voltage-resistant inhibition of the P/Q-type channel is caused by the interaction between the C-terminal domain of the Ca2+ channel α1A subunit and the N-terminal region of Gαo.
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© 2002 by the PHARMACEUTICAL SOCIETY OF JAPAN
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