Since the meshfree methods in general do not require any mesh data in an explicit fashion, it is believed that the burden and cost of modeling processes may be alleviated. The authors have reported a systematization of meshfree method, where the data may be constructed by implementing the CAD data or digital images. On the other hand, in order to carry out "realistic" simulations, scale of the problems are becoming larger which necessitates parallel processing. The authors, in the past, have proposed a data structure and parallel procedures for meshfree methods. In this report, the meshfree software system is linked with parallel data construction procedures, alleviatihg the burden for carrying out parallel meshfree computations.

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This paper reports molecular dynamics simulation of deformation behavior in ice structure accreting to metal surface. Microscopic shear deformation mecahnism of ice is considered. Water molecules are treated as rigid rotors interacting with SPC potential function. Ewald summation technique is adopted for the precise evaluation of the long-range(Coulomb) force. A calculation model includes interface region between ice and Pt wall as well as free surface region. Constant velocity is applied to the surface region in order to produce shear deformation in the whole calculation cell. Calculation is performed under constant freezing temperature. In the vicinity of interface region, slip is found between molecular layers and diffusional or rotational motion seems to occur there. This is mainly because, though the strong bonding of ice constituents to Pt surface with their preferable ordered structure resists, whole ice structure has to be deformed subjected to the external loading condition.

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In a multi-layered structure such as laminated metallic thin films, it is well known that hydrogen atmosphere causes functional degradation near interfaces. In this study, authors applied the molecular dynamics (MD) to analyses of deformation for multi-layered structures with the various crystal orientations to investigate the micro deformation mechanisms near interfaces effects of hydrogen on them. Analytical models are multi-layered structures composed of Cu or Fe. Results of Cu (f.c.c) are compared with those of Fe (b.c.c) in terms of differences of crystal structures.

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Understanding of the dislocation motion in nickel-base superalloy is very important to predict the lifetime of gas-turbine blades. γ' phase in nickel-base superalloy acts an strong obstacle to the dislocations, and, in some cases, stops the dislocation motion. In this paper, we performed a molecular dynamics simulation of dislocations motion in pure nickel matrix containing of one γ' particle. In the simulation, straight edge dislocation glides along the slip plane to contact with the γ' phase under shear stress loading. Subsequently we can observed that the motion and shape of the dislocation are affected by the γ' particle.

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A computational fluid-dynamics simulation for a turbulent combustion is established using a stochastic approach, and applied to Diesel Combustion. The nonuniform states of turbulence mixing, ignition process and formation of Nitric oxide (NO) are statistically described using the probability. density function (PDF). The results show that the courses of in-cylinder pressure is good agreement with experimental data and the rapid formation of NO in the beginning of the combustion is calculated. Furthermore, the local hot spots, which related to NO production, are well predicted.

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First order analysis is required for LSI designers to determine the optimal structure because the microscopic structure determines the macroscopic behavior of an LSI structure. The combination of modeling the 3D structure with a spread sheet tool and utilizing an image based CAE system is discussed to achieve the practical solution for the analysis. The calculations of typical LSI models that require heavy man-power with the conventional CAE tools have been shown to be made in two orders of shorter time.

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We improved mechanical reliability of titanium-silicide interconnections for deep-submicron semiconductor devices by minimizing silicidation-induced stress. Mechanical stress develops in interconnection structures due to the shrinkage of newly grown silicide film during silicidation. Silicidation-induced stress was measured by inducing the reaction between a silicon wafer and a titanium film deposited on the wafer, and it was higher than 1 GPa. The stress developed near the interface between the grown silicide film and the remaining silicon was analyzed using a finite-element method. The critical stress for delamination at the interface was determined by comparing the results of the estimated stress at the interface with the cross-sectional observation results of test samples.

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