We fabricated Zinc oxide (ZnO) films on a glass substrate by using RF magnetron sputtering. The effect of ion irradiation controlled by target RF power
PT and Ar pressure
PAr on the ZnO film properties was investigated. Argon ion line intensity
IArII near the target increased with
PT. The
IArII was almost constant with the increase in
PAr. The effect of ion irradiation was enhanced by increasing
PT, while the effect decreased with the increase in
PAr. Carrier density
n and hall mobility μ of the fabricated ZnO films were strongly dependent on the film structure affected by ion irradiation. For
PT=70 W and
PAr=0.7 Pa, the lowest film resistivity ρ of 2.4×10
−3 Ωcm was measured. The average visible transmittance
TAV was estimated assuming the thickness of fabricated ZnO films was consistently 150 nm.
TAV increased with the effect of ion irradiation. We found that the effect of ion irradiation was useful for controlling the properties of ZnO films.
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