We investigated the electrical characteristics of Au/
n-GaN Schottky rectifier incorporating a copper pthalocyanine (CuPc) interlayer using current–voltage (
I–
V), capacitance–voltage (
C–
V) and conductance–voltage (
G–
V) measurements. The barrier height of the Au/CuPc/
n-GaN Schottky contact was higher than that of the Au/
n-GaN Schottky diode, indicating that the CuPc interlayer influenced the space charge region of the
n-GaN layer. The series resistance of Au/CuPc/
n-GaN Schottky contact extracted from the
C–
V and
G–
V methods was dependent on the frequency. In addition, the series resistance obtained from
C–
V and
G–
V characteristics was comparable to that from Cheung’s method at sufficiently high frequencies and in strong accumulation regions. The forward log
I–log
V plot of Au/CuPc/
n-GaN Schottky contact exhibited four distinct regions having different slopes, indicating different conduction mechanisms in each region. In particular, at higher forward bias, the trap-filled space-charge-limited current was the dominant conduction mechanism of Au/CuPc/
n-GaN Schottky contact, implying that the most of traps were occupied by injected carriers at high injection level.
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