High-Efficiency 250-320 GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
Released on J-STAGE: August 22, 2023 |
Article ID 2023MMP0005
Yusuke KUMAZAKI, Shiro OZAKI, Naoya OKAMOTO, Naoki HARA, Yasuhiro NAKASHA, Masaru SATO, Toshihiro OHKI
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