Advertising expenses have been reduced because of the economic depression and the move of the signage market from analog technology to digital technology. Because of this market trend, the advertisement and signboard businesses based on conventional printing technologies need to add another value to their services in order to survive. Digital signage technology may create new markets in the field of printed signage. Therefore, the key to sustain a business in the signage market is to find the unique selling point (USP) of one's own company and grow the company to the next level.

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地域結集型共同研究事業では、（K A S T）との共同研究事業として進めてきた「独創的光材料の開発による環境技術の創生」プロジェクトにおいて、表面プラズモン共鳴（S P R）現象を利用した2種のバイオセンサー「光導波路型S P R装置」と「二次元イメージングS P R装置」を開発した。

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We investigated the effects of a high-temperature environment on diesel spray combustion and formation and oxidation of soot in the flame by eliminating the effects of wall temperature and boundary layer as much as possible using a rapid compression machine which has large combustion chamber. When gas temperature increased, short ignition delay and elongation of combustion was observed by analyzing the cylinder pressure diagram. However disappearance time of luminous flame did not change. Recombination of thermal dissociation must be considered as apparent heat release. Higher surrounding gas temperature results in increased soot formation time and extended low-density soot region in the flame, in spite of almost the same time histories of total amount of soot.

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我々の身近な物質界を支配しているのは電磁気力であり,電磁気力を具現しているのが光であるから,我々が物質界と相互作用するとき,光が本質的な役割を果たすのは当然である.光合成や視覚などの生物学的現象,光エネルギー変換,光機能性物質の創製,光情報処理などの最新科学技術,これらがいずれも光を仲立ちとして成立しているのは決して偶然ではない.光に対する物質の応答の仕組みを原子・分子のレベルで解明することは,これらの相互作用を正しく理解し,あるいは創り出し,また制御する道を拓く.ピコ秒時間分解ラマン分光法は,そのための戦略的手法となる可能性を秘めた強力な分光手法である.

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We have grown group III nitrides on fcc metal substrates with high thermal conductivities such as Cu(111) and Ag(111) by pulsed laser deposition (PLD). We have found that the use of low temperature AlN buffer layers allow us to grow GaN films epitaxially. We have also found that the epitaxial relationship is GaN[0001] // fcc[111] and GaN[11-20] // fcc[1-10].

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We have grown GaN on Cu(111) substrates by pulsed laser deposition (PLD). We have found that high quality GaN grows epitaxially with the use of low temperature AlN buffer layers and the epitaxial relationship between GaN and Cu is GaN[0001]//Cu[111] and GaN[11-20]//Cu[01-1].

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