Facile 1, 4-Silyl Rearrangement with Concomitant Loss of a Benzenesulfonyl Group : One-Pot Synthesis of Allyloxysilanes

Abstract

In contrast to the thermal stability of the oxido anions 7, facile eliminative rearrangement has been shown to occur in the case of the oxido anions 2 which possess an aryl substituent on the carbon atom bearing the trimethylsilyl group. Thus, the one-pot synthesis of the allyloxysilanes 5, starting from the (E)-β-(trimethylsilyl) vinyl sulfone 1, was achieved via the facile 1, 4-silyl rearrangement of the oxido anions 2 with concomitant loss of the benzenesulfonyl group.