Growth Characteristics of Graphene Film by Chemical Vapor Deposition Method Using Nozzle Gas Injection

抄録

Graphene has attracted much attention due to its many unique properties and potential applications. It is considered that a chemical vapor deposition (CVD) method is a promising for growth method of graphene. We have examined growth characteristics of graphene by means of a low-pressure alcohol catalytic CVD (LP-ACCVD) method. Here nozzle gas injection is used to supply carbon source gas to a substrate. This method enables efficient supply of carbon source gas to a substrate for the growth of graphene. Therefore, an efficient growth and lowering of the growth temperature of graphene is expected. [DOI: 10.1380/ejssnt.2015.265]