抄録
We observed and claried the elemental process steps in vapor phase and on surface in metal-organic chemical vapor deposition (MOCVD) reactor by in-situ infrared absorption spectroscopy, and showed schematic diagram of the reaction steps of trimethylgalliun (TMG) and AsH3 (arsine) as precursors. The surface reactions of TMG and AsH3 on the orientation dependence of the substrates were just the opposite each other. In discussion, the dominant reactions and the inhibitive factors for atomic layer epitaxy (ALE) of GaAs were focused. The results lead to the ALE process which dominates the surface reaction of Ga-compound followed by the surface reaction of As-compound on (100), however no reaction of Ga-compound occurs on (111)A surface, and no reaction of AsH3 occurs on (111)B surface. [DOI: 10.1380/ejssnt.2015.357]
