Trial of Ga-doping on ZnO Nanoparticles by Thermal Treatment with Ga₂O₃ Nanoparticles

抄録

Direct Ga-doping into ZnO nanoparticles (NPs) were tried by thermal treatment mixed with Ga₂O₃ particles. Residual Ga₂O₃ particles were completely removed by appropriate centrifugation process. To confirm the Ga-doping, variations of sheet resistances for sprayed NP-layers on glass substrates were investigated, showing successful and dramatic reduction from GΩ sq⁻¹-order to sub-kΩ sq⁻¹. The minimum sheet resistance reached to 225 Ωsq⁻¹. From X-ray diffraction and X-ray photoelectron spectroscopy analyses, it can be concluded that Ga atoms diffused from Ga₂O₃ into ZnO-NPs in the thermal treatment process, and some of them substituted for Zn atoms and were activated as donors. These results can contribute to continuous advance of ZnO-NP-based thin-film-transistor fabrication technique.