2020 年 18 巻 p. 293-299
The paper describes the impact of the crystallographic orientation of an n-type GaAs substrate on the electrical properties of a sulfonated polyaniline (SPAN) thin film with a thickness of 120 nm grown on different n-type GaAs substrates orientation, which are (100), (311)A, and (311)B GaAs planes. Electrical characterization was performed by using current density-voltage (J−V) at room temperature and different temperatures (60−360 K). An ideality factor (n), a Schottky barrier height (Φb), and an activation energy (Ea) were extracted from forward J−V characteristics. From the J−V results, it was obtained that the rectification value at 0.5 V for the SPAN/(311)B GaAs hybrid device is higher than those for SPAN grown on the (100) and (311)A GaAs planes. Furthermore, as the temperature of the three heterojunction devices rises, the value of Φb increases, n drops, and Ea rises. The Ea measurements revealed that Ea for the SPAN/(311)B n-type GaAs heterostructure is lower than those for SPAN samples grown on the (100) and (311)A n-type GaAs planes. This could be related to the low number of defects in SPAN/(311)B than the other two samples. These results make SPAN with a thickness of 120 nm grown on the high index GaAs planes an interesting hybrid device for future devices applications.
