Capacitance Method for Identifying Degradation due to Electrical Stress in MOSFETs

抄録

This paper investigates the influence of oxide-trapped charge distributions on the C-V dependence of lateral source—base and drain—base junctions of nanoscale metal-oxide-semiconductor field-effect transistors (MOSFET) through simulation. Distributions suitable for different types of electrical voltages are considered. Simulation results show that the transition capacitance of lateral junctions at low applied voltages depends on the position of the maximum of the distributions along the channel. The ratio of the transition capacitances of source—base and drain—base junctions at low applied voltages depends on the position of the distribution maximum. This dependence can be used to estimate the distribution of oxide trapping charges injected into the oxide layer under different electrical stresses.