Processes of Current Transport in p-Si-n-(Si₂)_1−y−z(GaP)_y(ZnSe)_z Heterostructure Produced by Liquid Phase Epitaxy

抄録

The possibility of growing multicomponent epitaxial films of a semiconductor solid solution of molecular substitution (Si₂)_1−y−z(GaP)_y(ZnSe)_z on Si and GaP substrates by liquid-phase epitaxy is shown. The distribution profiles of the atoms of the solid solution components Ga, P, Zn, Se, and Si over the thickness of the epitaxial film have been determined. The current-voltage (I−V) characteristics of p-Si-n-(Si₂)_1−y−z(GaP)_y(ZnSe)_z heterostructures have been studied. A temperature-independent I−V characteristic has been found, the existence of which is explained on the basis of a theory considering the possibility of "blurring" of the impurity level. By comparing the theoretical and experimental results, the half-width of the blurring band for the energy levels of atoms of Si₂ and GaP molecules was determined, which had values equal to 0.146 and 0.34 eV, respectively.