抄録
The evolution of Ga adsorption on a Si(113) surface at sample temperatures between 460°C and 500°C has been investigated using in-situ low-energy electron microscopy and low-energy electron diffraction. The formation of surface facets in the [1-10] direction was observed. From series of low-energy electron diffraction images at different electron energies, reciprocal space maps in different k⊥-k// planes were obtained. This allowed to determine both facet angles to be 9.8° ± 1.0° and thus the facet orientations to be (112) and (115). With low-energy electron microscopy, a well ordered array of nanofacets with about 40 nm periodicity in the [33-2] direction was observed. [DOI: 10.1380/ejssnt.2005.379]
