Direct observation of the site-specific valence electronic structure at SiO2/Si(111) interface

Y. Yamashita; S. Yamamoto; K. Mukai; J. Yoshinobu; Y. Harada; T. Tokushima; T. Takeuchi; Y. Takata; S. Shin; K. Akagi; S. Tsuneyuki

doi:10.1380/ejssnt.2006.280

Regular Papers

Direct observation of the site-specific valence electronic structure at SiO₂/Si(111) interface

Y. Yamashita, S. Yamamoto, K. Mukai, J. Yoshinobu, Y. Harada, T. Tokushima, T. Takeuchi, Y. Takata, S. Shin, K. Akagi, S. Tsuneyuki

著者情報

キーワード: silicon, silicon oxides, semiconductor-insulator interfaces, X-ray emission, density functional calculations, interface

ジャーナルフリー

2006 年 4 巻 p. 280-284

DOI https://doi.org/10.1380/ejssnt.2006.280

詳細

抄録

For today's silicon based devices, understanding the SiO₂/Si(111) interface on atomic level is an important subject for fabricating superior devices. However, despite of many studies on the SiO₂/Si(111) interface, the interfacial valence electronic states have been typically evaluated as the average and not as individual states. In the present study, we successfully observed valence electronic states of particular atoms at the SiO₂/Si(111) interface for the first time using soft x-ray absorption and emission spectroscopy. In addition, comparing the experimental results to first-principles calculations revealed local interfacial properties. [DOI: 10.1380/ejssnt.2006.280]

責任著者(Corresponding author)

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