e-Journal of Surface Science and Nanotechnology
Online ISSN : 1348-0391
ISSN-L : 1348-0391
Conference -ISSS-5-
Observation of Transformation from Quantum Shuttle to Single-Electron Tunnel in Nanopillar Transistor
Yue-Min WanShiao-Yu ChenChe-Min YangChih-An ChenYi-Feng ChenHsiang-Chen Hsu
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2009 年 7 巻 p. 518-520

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We reports observation of giant switching currents in nanopillar transistors at 300 K. It is found that these signals represent mechanical vibration due to the interaction of charging electron and the elastic materials of silicon and silicon nitride. Specifically, when an electron is charged to penetrate the SiNx/Si/SiNx multilayer, an electrical force will be initiated to make it vibrate. In addition, such motion will couple to the electronic state in the central Si island for the optimal exchange of elastic and quantum energy. As a consequence, in some mechanical modes, these coupled vibrations will make the transistor functioning like a self-coordinated switching pump for persistent tunnel of electrical current. [DOI: 10.1380/ejssnt.2009.518]
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この記事はクリエイティブ・コモンズ [表示 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by/4.0/deed.ja
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