抄録
The polarized switching by flexoelectric effects was attempted using a HAN cell with bistable surface. The groove structure for the bistable surface was duplicated from a prism sheet with 1μm pitch to the UV curable resin film on the substrate surface. The rubbing treatment was done normal to the groove direction. The nematic mixture ZLI-4792 was injected into the cell, and the switching between two states was attempted under the dc electric field with interdigit electrodes. Under existing conditions, the bistable switching was observed, however, the memory function was not obtained. It seemed that the sufficient condition for memory function might be not obtained.