コミュニケーション
ケミカルエッチングされたPb-Snはんだ付きシリコン表面の仕事関数測定
2003 年 71 巻 1 号 p. 5-6
詳細
2003 年 71 巻 1 号 p. 5-6
Lead impurities on Si surface after the chemical etching and cleaning process were evaluated by measuring the work function in the silicon chip of the mesa structure. The ultraviolet rays photoelectron analysis in the air and the Maxwell stress microscope analysis were used for the evaluation. The values of the work function on Si surface are influenced by the cleaning technique. The part of low work function corresponds to Pb impurities observed by SEM.
