IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
LETTER
SiC JFET dc characteristics under extremely high ambient temperatures
Tsuyoshi FunakiJuan C. BaldaJeremy JunghansAvinash S. KashyapFred D. BarlowH. Alan MantoothTsunenobu KimotoTakashi Hikihara
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2004 Volume 1 Issue 17 Pages 523-527

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Abstract

This paper reports on the measured dc characteristics of a SiC JFET device from room temperature up to 450°C in order to evaluate the device's capability for high-temperature operation. The authors packaged SiC JFET bare die into a dedicated high-temperature package to be able to perform experiments under extremely high ambient temperatures. The experimental results show that the device can operate at 450°C, which is impossible for conventional Si devices, but the current capability of the SiC JFET diminishes with rising temperatures. For example, the saturation current becomes 20% at 450°C with respect to the value at the room temperature.

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© 2004 by The Institute of Electronics, Information and Communication Engineers
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