GaInAsP/InP strain-compensated multiple-quantum-wire lasers (wire widths of 19nm and 27nm in a period of 100nm) with SiO
2/semiconductor reflectors were realized by electron-beam lithography, CH
4/H
2 reactive ion etching and two-step organometallic vapor-phase-epitaxial growth processes. As a result, the threshold current densities of these quantum-wire lasers were lower than those of quantum-film lasers prepared on the same initial wafer and oscillations from the transition between the ground levels were observed at room temperature.
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