Low temperature formation of β-FeSi2 polycrystalline microstructure by pulsed laser deposition and thermal annealing

Hiroharu Sugawara; Shingo Nakamura; Masayuki Oouchi; Yui Kumura; Takenobu Shishido; Takatoshi Igarashi; Masato Kishi; Masahiro Tsuchiya

doi:10.1587/elex.1.253

LETTER

Low temperature formation of β-FeSi₂ polycrystalline microstructure by pulsed laser deposition and thermal annealing

Hiroharu Sugawara, Shingo Nakamura, Masayuki Oouchi, Yui Kumura, Takenobu Shishido, Takatoshi Igarashi, Masato Kishi, Masahiro Tsuchiya

Author information

Hiroharu Sugawara
Department of Electronic Systems Engineering, Tokyo Metropolitan Institute of Technology
Shingo Nakamura
Department of Electronic Systems Engineering, Tokyo Metropolitan Institute of Technology
Masayuki Oouchi
Department of Electronic Systems Engineering, Tokyo Metropolitan Institute of Technology
Yui Kumura
Department of Electronic Systems Engineering, Tokyo Metropolitan Institute of Technology
Takenobu Shishido
Department of Electronic Systems Engineering, Tokyo Metropolitan Institute of Technology
Takatoshi Igarashi
Department of Electronic Engineering, School of Engineering, The University of Tokyo
Masato Kishi
Department of Electronic Engineering, School of Engineering, The University of Tokyo
Masahiro Tsuchiya
Department of Electronic Engineering, School of Engineering, The University of Tokyo
National Institute of Information and Communications Technology

Keywords: β-FeSi₂, group four photonic material, pulsed laser deposition, Raman spectroscopy, low temperature annealing, transmission electron microscopy

JOURNAL FREE ACCESS

2004 Volume 1 Issue 9 Pages 253-257

DOI https://doi.org/10.1587/elex.1.253

Details

Abstract

β-FeSi₂ polycrystalline microstructure was successfully formed at exceptionally low temperature in the form of droplet with room temperature pulsed laser deposition and post-annealing below 350°C employed. Evidence of the β-phase formation was obtained through microscopic Raman spectroscopy and TEM analysis. The low temperature nature may originate from formation of intermediate amorphous phase possibly provided by quick heat removal from Fe-Si melts generated by laser ablation. This low temperature scheme offers an alternative method of producing polycrystalline β-FeSi₂ without higher temperature processes, which could be beneficially compatible with the standard Si device fabrication processes.

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