IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
Low temperature formation of β-FeSi2 polycrystalline microstructure by pulsed laser deposition and thermal annealing
Hiroharu SugawaraShingo NakamuraMasayuki OouchiYui KumuraTakenobu ShishidoTakatoshi IgarashiMasato KishiMasahiro Tsuchiya
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2004 Volume 1 Issue 9 Pages 253-257


β-FeSi2 polycrystalline microstructure was successfully formed at exceptionally low temperature in the form of droplet with room temperature pulsed laser deposition and post-annealing below 350°C employed. Evidence of the β-phase formation was obtained through microscopic Raman spectroscopy and TEM analysis. The low temperature nature may originate from formation of intermediate amorphous phase possibly provided by quick heat removal from Fe-Si melts generated by laser ablation. This low temperature scheme offers an alternative method of producing polycrystalline β-FeSi2 without higher temperature processes, which could be beneficially compatible with the standard Si device fabrication processes.

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© 2004 by The Institute of Electronics, Information and Communication Engineers
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