Low temperature formation of β-FeSi₂ polycrystalline microstructure by pulsed laser deposition and thermal annealing

抄録

β-FeSi₂ polycrystalline microstructure was successfully formed at exceptionally low temperature in the form of droplet with room temperature pulsed laser deposition and post-annealing below 350°C employed. Evidence of the β-phase formation was obtained through microscopic Raman spectroscopy and TEM analysis. The low temperature nature may originate from formation of intermediate amorphous phase possibly provided by quick heat removal from Fe-Si melts generated by laser ablation. This low temperature scheme offers an alternative method of producing polycrystalline β-FeSi₂ without higher temperature processes, which could be beneficially compatible with the standard Si device fabrication processes.