IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
LETTER
Millimeter-wave transmission line with through-silicon via for RF-MEMS devices
Shinpei OgawaTakeshi YuasaYoshio FujiiYukihiro TaharaHiroshi Fukumoto
著者情報
キーワード: TSV, RF-MEMS, packaging, millimeter-wave
ジャーナル フリー

2013 年 10 巻 16 号 p. 20130565

詳細
抄録
We designed and fabricated a low-loss transmission line structure with through-silicon vias (TSVs) for use in the millimeter-wave region for three-dimensional packaging of radio frequency microelectromechanical system devices. High-frequency simulations were used to determine the optimum transmission line structure. A transformer was employed to compensate for the impedance mismatch between the TSVs and the coplanar waveguide. The proposed structure was fabricated using a combination of surface micromachining and the molten solder ejection method. The electrical properties of the TSVs and the transmission line were measured, and a low insertion loss of 0.7dB at 80GHz was achieved.
著者関連情報
© 2013 by The Institute of Electronics, Information and Communication Engineers
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