抄録
We report on a simulation for aluminum gallium nitride (AlGaN)/gallium nitride (GaN) resonant tunneling diode (RTD) at room temperature by introducing deep-level trapping centers into the polarized AlGaN/GaN/AlGaN quantum well. Theoretical analysis reveals that the degradations of NDR characteristics in GaN based RTDs are actually caused by the combined actions of the activation energy and the trap density. Furthermore, the trapping centers with high activation energy play a dominant role in the degradation of negative differential resistance (NDR) characteristics.
