Loss reduction of lateral power diode on SOI substrate with trenched buried oxide layer

Abstract

We have investigated the static and dynamic characteristics of high voltage lateral power diode (L-Diode) on silicon-on-insulator (SOI) substrate with planar / trenched buried oxide (Box) layer on the basis of device simulations. The conduction loss of the conventional L-Diode with planar Box layer is found to be reduced as a result of improving blocking capability by trenching the Box layer. In addition, the switching loss of the conventional L-Diode with planar Box layer, which stems from the second peak of the recovery current, is substantially reduced by adopting the trenched Box layer with suppression of the dynamic avalanche phenomenon.