IEICE Electronics Express
Online ISSN : 1349-2543
LETTER
Thermo-mechanical performance of Cu and SiO2 filled coaxial through-silicon-via (TSV)
Fengjuan WangZhangming ZhuYintang YangXiaoxian LiuRuixue Ding
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2013 Volume 10 Issue 24 Pages 20130894

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Abstract

Analytical model for thermal stress in silicon induced by coaxial Through-silicon-via (TSV) is proposed. ANSYS is employed to verify the proposed model. It is shown that the average errors are ∼2.5% for Cu and SiO2 filled coaxial TSV. Based on the analytical model, thermo-mechanical performance of coaxial TSV is studied. Design guide lines for coaxial TSV are also given: 1) the smaller the sizes of metal parts, especially the outer metal shell, the better the thermo-mechanical performance; and 2) the dielectric size and the TSV height play unimportant roles on the thermal stress state.

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© 2013 by The Institute of Electronics, Information and Communication Engineers
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