抄録
Analytical model for thermal stress in silicon induced by coaxial Through-silicon-via (TSV) is proposed. ANSYS is employed to verify the proposed model. It is shown that the average errors are ∼2.5% for Cu and SiO2 filled coaxial TSV. Based on the analytical model, thermo-mechanical performance of coaxial TSV is studied. Design guide lines for coaxial TSV are also given: 1) the smaller the sizes of metal parts, especially the outer metal shell, the better the thermo-mechanical performance; and 2) the dielectric size and the TSV height play unimportant roles on the thermal stress state.
