IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
LETTER
High voltage (>1100V) SOI LDMOS with an accumulated charges layer for double enhanced dielectric electric field
Xiaoming YangTianqian LiYu CaiJun WangChangjiang Chen
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JOURNALS FREE ACCESS

2013 Volume 10 Issue 4 Pages 20130057

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Abstract

A high voltage silicon-on-insulator (SOI) LDMOS with an accumulated charges layer (ACL) for double enhanced dielectric electric field (DEDF) is proposed. The electrons and holes can be accumulated in the ACL with a back-gate bias in off-state. These charges can enhance the dielectric field in the buried oxide (BOX) layer under the source and drain for improving breakdown voltage (BV). Moreover, the ACL can also enhance the reduced surface field (RESURF) effect. Compared with the conventional SOI and Shield-Trench SOI, BV of the DEDF SOI can achieve 1163V at 1µm BOX and 550V back-gate voltage.

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© 2013 by The Institute of Electronics, Information and Communication Engineers
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