A 0.13-µm CMOS 0.1-12GHz active balun-LNA for multi-standard applications

Abstract

A 0.1-12GHz Low Noise Amplifier (LNA) with an active balun is proposed for multi-standard applications. In order to realize wideband matching and single-to-differential (S2D) conversion simultaneously, a single-end resistive negative feedback amplifier is adopted as the first stage for input impedance matching, and a novel active balun consisting of common source amplifier and source follower is designed as latter stage for S2D conversion. This LNA is fabricated in a 0.13-µm CMOS process with an active area of 0.33mm². The measurement results show that over the full band of interest, the LNA achieves a minimum noise figure (NF) of 3.2dB, input reflection coefficient S11 less than -9.3dB, a power gain (S21) of 14.1dB and -3.6dBm IIP3 with a power consumption of 10.8mW from 1.2-V supply.