Area-efficient analog peripheral circuit techniques for Solid State Drive with NAND flash memories

Youngil Kim; Sangsun Lee

doi:10.1587/elex.10.20130127

IEICE Electronics Express

Online ISSN : 1349-2543
ISSN-L : 1349-2543

LETTER

Area-efficient analog peripheral circuit techniques for Solid State Drive with NAND flash memories

Youngil Kim, Sangsun Lee

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Keywords: Solid State Drive (SSD), NAND flash memory, charge pump, boost converter, VDC

JOURNAL FREE ACCESS

2013 Volume 10 Issue 5 Pages 20130127

DOI https://doi.org/10.1587/elex.10.20130127

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Abstract

This letter proposes area-efficient peripheral circuit techniques for 3D Solid State Drive (SSD) with NAND flash memories. We reduced charge pump stage using external high voltage of 12V and 5V, and improve target voltage accuracy using a cascode error amplifier of high voltage linear regulator. Also, we proposed fast transient response active mode VDC using NMOS pass element with external high voltage of 5V.

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