IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
LETTER
Highly efficient 2.7-2.9GHz class-F and inverse class-F power amplifiers in GaN HEMT technology
Oguzhan Kizilbey
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JOURNALS FREE ACCESS

2013 Volume 10 Issue 7 Pages 20130132

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Abstract

In this letter, novel class-F and inverse class-F power amplifier (PA) topologies were proposed, simulated, realized and measured for 2.7-2.9GHz frequency band by using Gallium Nitride high electron mobility transistor (GaN HEMT). Realizations are made on Rogers TMM3 dielectric material which has 0.381mm thickness and 3.27 dielectric constant. Proposed class-F and inverse class-F PAs have 10W (40dBm) output power with 76% and 82% power added efficiency (PAE), respectively. Both PAs have state-of-the-art PAE performance compared to the PAs in the literature. Furthermore, the measurement results show that; under the same operation conditions, the inverse class-F PA has greater PAE than the class-F PA.

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© 2013 by The Institute of Electronics, Information and Communication Engineers
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